The HM628512B is a 4-Mbit static RAM organized 512k-word × 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (footprint pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high-density mounting. The HM628512B is suitable for a battery backup system
628512 Pinout
628512 Pin Configuration
| Pin No | Pin Name | Description |
|---|---|---|
| 1 | A18 | Address Pin 18 |
| 2 | A16 | Address Pin 16 |
| 3 | A14 | Address Pin 14 |
| 4 | A12 | Address Pin 12 |
| 5 | A7 | Address Pin 7 |
| 6 | A6 | Address Pin 6 |
| 7 | A5 | Address Pin 5 |
| 8 | A4 | Address Pin 4 |
| 9 | A3 | Address Pin 3 |
| 10 | A2 | Address Pin 2 |
| 11 | A1 | Address Pin 1 |
| 12 | A0 | Address Pin 0 |
| 13 | I/O 0 | Data Inputs/Outputs 0 |
| 14 | I/O 1 | Data Inputs/Outputs 1 |
| 15 | I/O 2 | Data Inputs/Outputs 2 |
| 16 | VSS | Ground Pin |
| 17 | I/O 3 | Data Inputs/Outputs 3 |
| 18 | I/O 4 | Data Inputs/Outputs 4 |
| 19 | I/O 5 | Data Inputs/Outputs 5 |
| 20 | I/O 6 | Data Inputs/Outputs 6 |
| 21 | I/O 7 | Data Inputs/Outputs 7 |
| 22 | CS’ | Chip Select Pin |
| 23 | A10 | Address Pin 10 |
| 24 | OE’ | Output Enable Pin |
| 25 | A11 | Address Pin 11 |
| 26 | A9 | Address Pin 9 |
| 27 | A8 | Address Pin 8 |
| 28 | A13 | Address Pin 13 |
| 29 | WE’ | Write Enable Pin |
| 30 | A17 | Address Pin 17 |
| 31 | A15 | Address Pin 15 |
| 32 | VCC | Power Supply Pin |
628512 Key Feature
- Single 5 V supply
- Access time: 55/70 ns (max)
- Power dissipation
- Active: 50 mW/MHz (typ)
- Standby: 10 µW (typ)
- Completely static memory. No clock or timing strobe required
- Equal access and cycle times
- Common data input and output: Three state output
- Directly TTL compatible: All inputs and outputs
- Battery backup operation
You can download this datasheet for 628512 512Kx8 CMOS RAM – Datasheet from the link given below:
