Circuits DIY – Page 245

IRFP250 33A 200V N-Channel Power MOSFET is advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l…

The BD680 is silicon epitaxial-base PNP power transistor in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. The…

IRFBG30 3.1A 1000V N-Channel Power MOSFET provide the designer With the best combination of fast switching, ruggedized device design, low on…

IRF510 5.6A 100V N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and gua…

The BD681 is silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. Th…

The MJL21194 NPN Power Transistor is utilize Perforated Emitter technology and are specifically designed for high power audio output, disk h…

The BD678 is silicon epitaxial-base PNP power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. Th…

The BD679 is silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. Th…

IRF1010 85A 55V N-Channel Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi…

2SK246 N-Channel JFET is designed for constant current, impedance converter and DC-AC high input impedance amplifier circuit applications. B…

BUK456 4A 800V N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mo…

The TDA7021T integrated radio receiver circuit is for portable radios, stereo as well as mono, where a minimum of periphery is important in…

The MJL21193 is utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and l…

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