MJE13009 NPN High Power Transistor - Datasheet
The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly…
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The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly…
The 29C512 is a 5-volt only in-system Flash programmable and erasable read-only memory (PEROM). Its 512K of memory is organized as 65,536 wo…
The BTA16 TRIAC family is a high-performance glass passivated PN device. It is suitable for general purpose applications where high surge cu…
BR82 200V 8A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a 125 amperes peak. BR82 has a single-phase, hal…
The AT28C256 is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words…
The 29C256 is a five-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 256K of memory is organized as 32,768…
The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is…
The 29C010A is a 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 1 megabit of memory is organized as 131…
The 29C020 is a 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 2 megabits of memory are organized as 26…
The NM27C040 is a high-performance, 4,194,304-bit Electrically Programmable UV Erasable Read-Only Memory. It is organized as 512K words of 8…
The 28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable re…
The BTA41 TRIAC family is high-performance glass passivated PNPN devices. This device is a fully isolated package suitable for AC switching…
The 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for reading/write random access nonvolatile memory. The…
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