The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read-only memory with popular, easy-to-use features. The AT28C64 is accessed like a Static RAM for the read or write cycles … Read more
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read-only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology. The AT28C64 is accessed like … Read more
The AT28C256 is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. . When the device is deselected, the CMOS standby current is less … Read more
The AT28C256 is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times … Read more
This 25-bit 1:1 or 14-bit 1:2 configurable registered buffer is designed for 1.7-V to 1.9-V VDD operation. All clock and data inputs are compatible with the JEDEC standard for SSTL_18. The control inputs are LVCMOS. … Read more
The AT28C256 is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. When the device is deselected, the CMOS standby current is less than … Read more
The AT28C17 is a low-power, high-performance Electrically Erasable, and Programmable Read-Only Memory with easy-to-use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable … Read more
2817 16K 250ns Parallel EEPROM is designed and characterized for use in high-speed data acquisition systems, fast Fourier transform analysis, radar pulse analysis, scanning medical instrumentation, and similar applications requiring fast conversion rates, good linearity, … Read more
The 2816A is a CMOS 16K non-volatile Electrically Erasable PROM. The 2816A is accessed like a static RAM for the read or write cycles without the need for external components. During a “byte write”, the … Read more
The 28C16A is a CMOS 16K non-volatile Electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need for external components. During a “byte write”, the … Read more
The 93LC66 is 4K, low-voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits, depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile … Read more
The 93LC56 is 2K, low-voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits, depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile … Read more
The 93LC46 is 1K, low-voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits, depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile … Read more
The AT93C86A provides 16384 bits of serial electrically erasable programmable read-only memory (EEPROM), organized as 1024 words of 16 bits each when the ORG pin is connected to VCC and 2048 words of eight bits … Read more
The AT93C66 provides 4096 bits of serial electrically erasable programmable read-only memory (EEPROM), organized as 256 words of 8 bits each (when the ORG pin is connected to VCC), and 128 words of 8 bits … Read more
The AT93C56 provides 2048 bits of serial electrically erasable programmable read-only memory (EEPROM), organized as 128 words of 16 bits each (when the ORG pin is connected to VCC), and 128 words of 8 bits … Read more