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MJE182 NPN Power Transistor - Datasheet

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MJE182 Datasheet

The MJE182 NPN type is silicon epitaxial planar, complementary transistor in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications

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MJE182 Pinout

MJE182 Pin Configuration

Pin NoPin Name
1Emitter
2Collector
3Base

MJE182 Key Features

  • Collector–Emitter Sustaining Voltage —VCEO(sus) = 80 Vdc — MJE182
  • DC Current Gain —
    • hFE = 30 (Min) @ IC = 0.5 Adc
    • hFE = 12 (Min) @ IC = 1.5 Adc
  • Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB
  • Type Designator: MJE182
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 7 V

MJE182 Specification

Ic (mA)PdVce (max)Vcb hfe@IcFt
31.58010050-25010050

MJE182 Equivalent/Alternate:

  • MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE172

Application

  • Low Power Audio Amplifier
  • Low Current
  • High Speed Switching Applications

You can download this datasheet for MJE182 NPN Power Transistor from the link given below:

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