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The RHRG30120 is a hyper fast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion implanted epitaxial planar construction.
RHRG30120 Pinout
RHRG30120 Features
- Hyper fast Recovery trr = 85 ns
- Max Forward Voltage, VF = 3.2 V
- 1200 V Reverse Voltage and High Reliability
- Avalanche Energy Rated
- This Device is Pb−Free and is RoHS complian
RHRG30120 Specification
| Diode Type | Rectifier Diode |
| Application | Hyperfast Soft Recovery |
| Diode Element Material | Silicon |
| Forward Voltage-Max (VF) | 3.2 V |
| Non-rep Pk Forward Current-Max | 300.0 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 175.0 Cel |
| Output Current-Max | 30.0 A |
| Power Dissipation-Max | 125.0 W |
| Rep Pk Reverse Voltage-Max | 1200.0 V |
| Reverse Current-Max | 500.0 µA |
| Reverse Recovery Time-Max | 0.075 µs |
Application
- Switching Power Supplies
- Power Switching Circuits
- General Purpose
You can download this datasheet for RHRG30120 30A 1200V Hyper fast Diode from the link given below:
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