IRF4905 74A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRLZ34N 30A 55V N-Channel Power MOSFET is advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs … Read more
IRL3803 140A 30V N-Channel Power MOSFET is advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs … Read more
IRL3705 89A 55V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRL2203 116A 30V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are … Read more
IRL540 36A 100V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRL520 10A 100V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRFZ48 50A 60V N-Channel Power MOSFET with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use … Read more
IRFZ46 50A 50V N-Channel Power MOSFET is Specifically designed for Automotive applications, this stripe planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined … Read more
IRFZ44 49A 55V N-Channel Power MOSFET benefit, is combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable … Read more
IRFZ34 26A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET … Read more
IRFZ24N 17A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET … Read more
IRFZ14 10A 60V N-Channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power … Read more
IRF740 10A 400V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources IRF740 Pinout IRF740 Pin … Read more
IRF640 18A 200V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. IRF640 Pinout IRF640 Pin … Read more
IRF634 8.1A 250V N-Channel Power MOSFET is advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are … Read more