The 23K256 is a 256 Kbit Serial SRAM device. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data … Read more
RAM
The 62256C family is fabricated by SAMSUNG¢s advanced CMOS process technology. The family supports various operating temperature ranges and has various package types for user flexibility of system design. The family also supports low data … Read more
62256 32Kx8 CMOS RAM – Datasheet
The 43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions … Read more
43256 32Kx8 100ns Low-Power CMOS RAM – Datasheet
The 62256A is a CMOS static RAM organized 32K-word × 8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in an 8 × 14 mm … Read more
62256 32Kx8 100ns Low-Power CMOS RAM – Datasheet
The HM628128D is a 1-Mbit static RAM organized 131,072k-word × 8-bit. 628128D has higher density, higher performance, and low power consumption by employing CMOS process technology. The HM628128D offers low-power standby power dissipation; therefore, it … Read more
628128 128Kx8 CMOS RAM – Datasheet
The KM681000B family is CMOS process technology. The family can support various operating temperature ranges and have various package types for user flexibility of system design. The family also supports low data retention voltage for … Read more
681000 128Kx8 CMOS RAM – Datasheet
The 628128 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a very low voltage of 4.5V to 5.5V power supply Advanced … Read more
628128 128Kx8 70ns Low-Power CMOS RAM – Datasheet
The HM62256A is a CMOS static RAM organized 32k-word × 8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in an 8 × 14 mm … Read more
62256 32Kx8 120ns Low-Power CMOS RAM – Datasheet
The 684000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung’s advanced CMOS process. The 684000 has an output enable input for … Read more
684000 512Kx8 CMOS RAM – Datasheet
The 511000 is the new generation dynamic RAN organized 1,048,576 words by 1 bit. The TC511000 utilizes TOSHIBA’s CHAOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both … Read more
511000P 1M Video RAM – Datasheet
The HM628512B is a 4-Mbit static RAM organized 512k-word × 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP … Read more
628512 512Kx8 CMOS RAM – Datasheet
The CY7C130 is a high-speed CMOS 1K by 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C130 can be utilized as either standalone 8-bit dual-port static … Read more
CY7C130 1Kx8 CMOS Dual Port SRAM 30ns – Datasheet
The 514256B is the new generation dynamic RAM organized as 262 144 words by 4-bit. The 514256B utilizes CMOS silicon-gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally … Read more
514256 256k Video RAM – Datasheet
The CY7C132 is a high-speed CMOS 2K by 8 dual-port static RAM. Two ports are provided to permit independent access to any location in memory. The CY7C132 can be utilized as either a standalone 8-bit … Read more
CY7C132 2Kx8 CMOS Dual Port SRAM 30ns – Datasheet
The 41256P is the new generation dynamic RAM organized 262,144 words by 1 bit, it is the successor to the industry standard TMM4164AP. The 41256P utilizes TOSHI BA’s N-channel Silicon gate process technology as well … Read more
41256 256k Video RAM – Datasheet
The 4116 is a new generation MOS dynamic random access memory circuit organized as 16,384 words by, 1 bit. As a state-of-the-art MOS memory device, the 4116 (16K advanced circuit techniques are designed to provide … Read more