IRF740 10A 400V N-Channel Power MOSFET - Datasheet
IRF740 10A 400V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology…
IRF740 10A 400V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology…
IRF640 18A 200V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology…
IRF634 8.1A 250V N-Channel Power MOSFET is advanced technology has been especially tailored to minimize on-state resistance, provide superio…
IRF840 8A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology…
IRF820 2.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technolog…
IRF5210 40A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene…
IRF720 3.3A 400V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technolo…
An inverter is a simple electronic device that can be used to provide backup power in case of a blackout or grid failure. An easy-to-build i…
IRF3710 57A 100V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve extremely low on-resistance per silicon are…
IRF610 3.3A 200V N-Channel Power MOSFET N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de…
IRF3205 110A 55V N-Channel Power MOSFET Rectifier is utilize for advanced processing techniques to achieve extremely low on-resistance per s…
IRF620 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary…
IRF540 30A 100V N-Channel Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficien…
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