Tag: power MOSFET

IRF4905 74A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef…

IRLZ34N 30A 55V N-Channel Power MOSFET is advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This…

IRL3803 140A 30V N-Channel Power MOSFET is advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Thi…

IRL3705 89A 55V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef…

IRL2203 116A 30V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene…

IRL540 36A 100V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef…

IRL520 10A 100V N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef…

IRFZ48 50A 60V N-Channel Power MOSFET with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known fo…

IRFZ46 50A 50V N-Channel Power MOSFET is Specifically designed for Automotive applications, this stripe planar design of HEXFET Power MOSFET…

IRFZ44 49A 55V N-Channel Power MOSFET benefit, is combined with the fast switching speed and ruggedized device design that HEXFET power MOSF…

IRFZ34 26A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silicon…

IRFZ24N 17A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silico…

IRFZ14 10A 60V N-Channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-res…

#power MOSFET