IRF9520 6.8A 100V P-Channel Power MOSFET - Datasheet
IRF9520 6.8A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e…
IRF9520 6.8A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e…
IRF830 4.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technolog…
IRF730 5.5A 400V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technolog…
IRF644 14A 250V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technolog…
IRF630 9A 200V N-Channel power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology m…
IRFR420 2.4A 400V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technol…
IRFR320 3.1A 400V N-Channel Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device de…
IRF3315 27A 150V N-Channel Power MOSFET Rectifier is utilize to advanced processing techniques to achieve extremely low on-resistance per si…
IRFP250 33A 200V N-Channel Power MOSFET is advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l…
IRFBG30 3.1A 1000V N-Channel Power MOSFET provide the designer With the best combination of fast switching, ruggedized device design, low on…
IRF510 5.6A 100V N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and gua…
IRF1010 85A 55V N-Channel Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi…
BUK456 4A 800V N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mo…
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