CY7C128 2Kx8 25ns CMOS RAM – Datasheet

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The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output-enable (OE), and three-state drivers. The CY7C128A has an automatic power-down feature, reducing the power consumption by 83% when deselected. Writing to the device is accomplished when the chip enable (CE) and write-enable (WE) inputs are both LOW. Data on the eight I/O pins (I/O0 through I/O7) is written into the memory location specified on the address pins (A0 through A10). Reading the device is accomplished by taking chip to enable (CE) and output-enable (OE) LOW while write enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the eight I/O pins.

CY7C128 Pinout

CY7C128 Pin Configuration

Pin NoPin NameDescription
1A7 Address Pin 7
2A6 Address Pin 6
3A5Address Pin 5
4A4 Address Pin 4
5A3 Address Pin 3
6A2 Address Pin 2
7A1 Address Pin 1
8A0 Address Pin 0
9I/O 0Data Inputs/Outputs 0
10I/O 1Data Inputs/Outputs 1
11I/O 2Data Inputs/Outputs 2
12GNDGround Pin
13 I/O 3Data Inputs/Outputs 3
14 I/O 4 Data Inputs/Outputs 4
15 I/O 5 Data Inputs/Outputs 5
16 I/O 6 Data Inputs/Outputs 6
17 I/O 7 Data Inputs/Outputs 7
18CS’Chip Select Pin
19A10 Address Pin 10
20OE’Output Enable Pin
21WE’Write Enable Pin
22A9 Address Pin 9
23A8 Address Pin 8
24VCCPower Supply Pin

CY7C128 Key Feature

  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • High speed
    • 15 ns
  • Low active power
    • 440 mW (commercial)
    • 550 mW (military)
  • Low standby power
    • 110 mW
  • TTL-compatible inputs and outputs
  • Capable of withstanding greater than 2001V electrostatic discharge
  • VIH of 2.2V

You can download this datasheet for CY7C128 2Kx8 25ns CMOS RAM – Datasheet from the link given below: