MJE13009 NPN High Power Transistor – Datasheet

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The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuit

MJE13009 Pinout

MJE13009 Pin Configuration

Pin NoPin Name
1Base
2Collector
3Emitter
4Case (Collector)

MJE13009 Key Features

  • VCEO(sus) 400 V and 300 V
  • Reverse Bias SOA with Inductive Loads @ TC = 100C
  • Inductive Switching Matrix 3 to 12 Amp, 25 and 100C
    • tc @ 8 A, 100C is 120 ns (Typ).
  • 700 V Blocking Capability
  • Type Designator: MJE13009
  • Material of Transistor: Si
  • Polarity: NPN

MJE13009 Specification

Ic (mA)PdVce (max)Vcb hfe@IcFt
121004007008-4050004

MJE13009 Equivalent/Alternate:


MJE1100, MJE1101, MJE1102, MJE1103, MJE1123, MJE12007

Application

  • Motor Controls
  • Switching Regulators
  • Deflection Circuits

You can download this datasheet for MJE13009 NPN High Power Transistor from the link given below: