Overview of P Channel MOSFET Two charge carriers—electrons and holes—are responsible for determining the conduction level in a bipolar junction transistor (BJT). The JFET, on the other hand, is a unipolar device since its conduction … Read more
P Channel MOSFET
For any device or circuit, over and under voltages are harmful. Under voltages can generate light flickers while overvoltages can damage the whole device. Understand this by the example of motor, a motor may get … Read more
Over Voltage and Reverse Voltage Protection Circuit
IRF4905 74A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRF4905 74A 55V P-Channel Power MOSFET – Datasheet
IRF5210 40A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRF5210 40A 100V P-Channel Power MOSFET – Datasheet
IRFP9240 12A 200V P-Channel Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher … Read more
IRFP9240 12A 200V P-Channel Power MOSFET – Datasheet
IRF9540 23A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRF9540 23A 100V P-Channel Power MOSFET – Datasheet
IRF9Z34N 19A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRF9Z34N 19A 55V P-Channel Power MOSFET – Datasheet
IRF9531 12A 60V P-Channel Power MOSFET is efficient geometry and unique processing Of the HEXFET design achieve very low on State resistance combined with high trans conductance and extreme device ruggedness The p-Channel HEXFETS are … Read more
IRF9531 12A 60V P-Channel Power MOSFET – Datasheet
IRF9533 10A 60V P-Channel Power MOSFET is advanced line Of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on state resistance combined with high trans conductance and … Read more
IRF9533 10A 60V P-Channel Power MOSFET – Datasheet
IRF9532 10A 100V P-Channel Power MOSFET is advanced line Of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on state resistance combined with high trans conductance and … Read more
IRF9532 10A 100V P-Channel Power MOSFET – Datasheet
IRF9530 12A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to … Read more
IRF9530 12A 100V P-Channel Power MOSFET – Datasheet
IRF5305 31A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are … Read more
IRF5305 31A 55V P-Channel Power MOSFET – Datasheet
IRF9520 6.8A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to … Read more
IRF9520 6.8A 100V P-Channel Power MOSFET – Datasheet
2SJ162 is a P Channel Power MOSFET with Current & Voltage Rating 7 ampere 160 volt respectively. 2SJ162 Pinout 2SJ162 Pin Configuration Pin No Pin Name 1 Gate 2 Source 3 Drain 2SJ162 Key Features … Read more
2SJ162 7A 160V P-Channel MOSFET – Datasheet
IRF9630 6.5A 200V P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. … Read more
IRF9630 6.5A 200V P-Channel Power MOSFET – Datasheet
IRF9640 11A 200V P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of … Read more