A brief introduction of P Channel MOSFET
Overview of P Channel MOSFET Two charge carriers—electrons and holes—are responsible for determining the conduction level in a … Read more
Overview of P Channel MOSFET Two charge carriers—electrons and holes—are responsible for determining the conduction level in a … Read more
For any device or circuit, over and under voltages are harmful. Under voltages can generate light flickers while … Read more
IRF4905 74A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. … Read more
IRF5210 40A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. … Read more
IRFP9240 12A 200V P-Channel Power MOSFETs from Vishay provide the designer with the best combination of fast switching, … Read more
IRF9540 23A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. … Read more
IRF9Z34N 19A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. … Read more
IRF9531 12A 60V P-Channel Power MOSFET is efficient geometry and unique processing Of the HEXFET design achieve very … Read more
IRF9533 10A 60V P-Channel Power MOSFET is advanced line Of power MOSFET transistors. The efficient geometry and unique … Read more
IRF9532 10A 100V P-Channel Power MOSFET is advanced line Of power MOSFET transistors. The efficient geometry and unique … Read more
IRF9530 12A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance … Read more
IRF5305 31A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. … Read more
IRF9520 6.8A 100V P-Channel Power MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance … Read more
2SJ162 is a P Channel Power MOSFET with Current & Voltage Rating 7 ampere 160 volt respectively. 2SJ162 … Read more
IRF9630 6.5A 200V P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, … Read more
IRF9640 11A 200V P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and … Read more