The 29C512 is a 5-volt only in-system Flash programmable and erasable read-only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. The device offers access times to 70 ns with a power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system re-programmability, the 29C512 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the 29C512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed
29C512 Pinout
29C512 Pin Configuration
| Pin No | Pin Name | Description |
|---|---|---|
| 1 | DC | Don’t Connect |
| 2 | WE’ | Write Enable Pin |
| 3 | A12 | Address Pin 12 |
| 4 | A7 | Address Pin 7 |
| 5 | A6 | Address Pin 6 |
| 6 | A5 | Address Pin 5 |
| 7 | A4 | Address Pin 4 |
| 8 | A3 | Address Pin 3 |
| 9 | A2 | Address Pin 2 |
| 10 | A1 | Address Pin 1 |
| 11 | A0 | Address Pin 0 |
| 12 | NC | No Connection |
| 13 | I/O 0 | Data Inputs/Outputs 0 |
| 14 | I/O 1 | Data Inputs/Outputs 1 |
| 15 | I/O 2 | Data Inputs/Outputs 2 |
| 16 | GND | Ground Pin |
| 17 | DC | Don’t Connect |
| 18 | I/O 3 | Data Inputs/Outputs 3 |
| 19 | I/O 4 | Data Inputs/Outputs 4 |
| 20 | I/O 5 | Data Inputs/Outputs 5 |
| 21 | I/O 6 | Data Inputs/Outputs 6 |
| 22 | I/O 7 | Data Inputs/Outputs 7 |
| 23 | CE’ | Chip Enable Pin |
| 24 | A10 | Address Pin 10 |
| 25 | OE’ | Output Enable Pin |
| 26 | NC | No Connection |
| 27 | A11 | Address Pin 11 |
| 28 | A9 | Address Pin 9 |
| 29 | A8 | Address Pin 8 |
| 30 | A13 | Address Pin 13 |
| 31 | A14 | Address Pin 14 |
| 32 | VCC | Power Supply |
29C512 Key Feature
- Fast Read Access Time – 70 ns
- 5-volt Only Reprogramming
- Sector Program Operation
- Single Cycle Reprogram (Erase and Program)
- 512 Sectors (128 Bytes/Sector)
- Internal Address and Data Latches for 128 Bytes
- Internal Program Control and Timer
- Hardware and Software Data Protection
- Fast Sector Program Cycle Time – 10 ms
- DATA Polling for End of Program Detection
- Low Power Dissipation
- 50 mA Active Current
- 100 µA CMOS Standby Current
- Typical Endurance > 10,000 Cycles
- Single 5V ± 10% Supply
- CMOS and TTL Compatible Inputs and Outputs
- Commercial and Industrial Temperature Ranges
- Green (Pb/Halide-free) Packaging Option
You can download this datasheet for AT29C512 512k 120ns CMOS Flash Memory – Datasheet from the link given below:
