The CY7C130 is a high-speed CMOS 1K by 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C130 can be utilized as either a standalone 8-bit dual-port … Read more
RAM’s
6116 Pinout 6116 Pin Configuration Pin No Pin Name Description 1 A7 Address Pin 7 2 A6 Address Pin 6 3 A5 Address Pin 5 4 A4 Address Pin 4 5 A3 Address Pin 3 … Read more
6116 2Kx8 150ns CMOS RAM – Datasheet
The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), an active … Read more
CY7C185 8Kx8 15ns CMOS RAM – Datasheet
The 23K640 is a 64 Kbit Serial SRAM device. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data … Read more
23K640 64k SPI Bus Serial SRAM – Datasheet
6264 Pinout 6264 Pin Configuration Pin No Pin Name Description 1 NC No Connection 2 A4 Address Pin 4 3 A5 Address Pin 5 4 A6 Address Pin 6 5 A7 Address Pin 7 6 … Read more
6264 8Kx8 120ns CMOS RAM – Datasheet
The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output-enable (OE), and three-state drivers. … Read more
CY7C128 2Kx8 25ns CMOS RAM – Datasheet
The 23K256 is a 256 Kbit Serial SRAM device. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data … Read more
23K256 256k SPI Bus Serial SRAM – Datasheet
The 62256C family is fabricated by SAMSUNG¢s advanced CMOS process technology. The family supports various operating temperature ranges and has various package types for user flexibility of system design. The family also supports low data … Read more
62256 32Kx8 CMOS RAM – Datasheet
The 43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions … Read more
43256 32Kx8 100ns Low-Power CMOS RAM – Datasheet
The 62256A is a CMOS static RAM organized 32K-word × 8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in an 8 × 14 mm … Read more
62256 32Kx8 100ns Low-Power CMOS RAM – Datasheet
The HM628128D is a 1-Mbit static RAM organized 131,072k-word × 8-bit. 628128D has higher density, higher performance, and low power consumption by employing CMOS process technology. The HM628128D offers low-power standby power dissipation; therefore, it … Read more
628128 128Kx8 CMOS RAM – Datasheet
The KM681000B family is CMOS process technology. The family can support various operating temperature ranges and have various package types for user flexibility of system design. The family also supports low data retention voltage for … Read more
681000 128Kx8 CMOS RAM – Datasheet
The 628128 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a very low voltage of 4.5V to 5.5V power supply Advanced … Read more
628128 128Kx8 70ns Low-Power CMOS RAM – Datasheet
The HM62256A is a CMOS static RAM organized 32k-word × 8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in an 8 × 14 mm … Read more
62256 32Kx8 120ns Low-Power CMOS RAM – Datasheet
The 684000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung’s advanced CMOS process. The 684000 has an output enable input for … Read more
684000 512Kx8 CMOS RAM – Datasheet
The 511000 is the new generation dynamic RAN organized 1,048,576 words by 1 bit. The TC511000 utilizes TOSHIBA’s CHAOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both … Read more