IRF630 9A 200V N-Channel power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
IRF630 Pinout
IRF630 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF630 Key Features
- 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V
- Low gate charge ( typical 22 nC)
- Low Cross ( typical 22 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRF630
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF630 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 10 | 100 | 200 | 0.4 | 20 |
IRF630 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Switching DC/DC Converters
- Switch Mode Power Supplies
- DC-AC Converters
- Uninterrupted Power Supply
- Motor Control
You can download this datasheet for IRF630 9A 200V N-Channel Power MOSFET from the link given below:
