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MJ11032 High-Current Complementary Power Transistors is use for 50 Ampere as output devices in complementary general purpose amplifier.
MJ11032 Pinout
MJ11032 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Emitter |
| 3 | Collector |
MJ11032 Key Features
- High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
- Curves to 100 A (Pulsed)
- Diode Protection to Rated IC
- Monolithic Construction with Built–In Base–Emitter Shunt Resistor
- Junction Temperature to +200C
- Type Designator: MJ11032
- Material of Transistor: Si
- Polarity: NPN
MJ11032 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 50 | 300 | 120 | 120 | 1000-18,000 | 25000 |
MJ11032 Equivalent/Alternate:
- MJ10000, MJ10001, MJ10002, MJ10003, MJ10004, MJ11033
Application
- General Purpose Amplifier
- Darlington
You can download this datasheet for MJ11032 NPN Power Darlington Transistor from the link given below:
