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The 1N5711 is passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling and wave shaping.
1N5711 Features
- Low turn-on voltage as low as 0.34 V at 1 mA
- Pico second switching speed
- High breakdown voltage up to 70 V
- Matched characteristics available
1N5711 Specification
| Mfr Package Description | HERMETIC SEALED, GLASS PACKAGE-2, DO-35 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 150.0 Cel |
| Output Current-Max | 0.033 A |
Applications
- Packaged in a low cost glass package
- High level detecting
- A-D converting
- Video detecting
- Frequency discriminating
- Sampling and wave shaping
You can download this datasheet for 1N5711 Small Signal Schottky Barrier Diode from the link given below:
