1N5817 Schottky Barrier Diode – Datasheet

1N5817 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.

1N5817 Features

• Extremely Low Forward Voltage
• Low Stored Charge
• Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb−Free Devices

1N5817 Specification

Mfr Package Description	PLASTIC PACKAGE-2, DO-41
Diode Type	RECTIFIER DIODE
Diode Element Material	SILICON
Forward Voltage-Max (VF)	0.45  V
Non-rep Pk Forward Current-Max	25.0  A
Operating Temperature-Min	-65.0  Cel
Operating Temperature-Max	150.0  Cel
Output Current-Max	1.0  A
Rep Pk Reverse Voltage-Max	20.0  V

Application

• Low voltage
• High frequency inverters
• Reverse polarity protection

You can download this datasheet for 1N5817 Schottky Barrier Diode from the link given below: