1N5817 Schottky Barrier Diode – Datasheet

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1N5817 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.

1N5817 Features

  • Extremely Low Forward Voltage
  • Low Stored Charge
  • Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • These are Pb−Free Devices

1N5817 Specification

Mfr Package DescriptionPLASTIC PACKAGE-2, DO-41
Diode TypeRECTIFIER DIODE
Diode Element MaterialSILICON
Forward Voltage-Max (VF)0.45  V
Non-rep Pk Forward Current-Max25.0  A
Operating Temperature-Min-65.0  Cel
Operating Temperature-Max150.0  Cel
Output Current-Max1.0  A
Rep Pk Reverse Voltage-Max20.0  V

Application

  • Low voltage
  • High frequency inverters
  • Reverse polarity protection

You can download this datasheet for 1N5817 Schottky Barrier Diode from the link given below: