IRF830 4.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources
IRF830 Pinout
IRF830 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF830 Key Features
- 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
- Low gate charge ( typical 27 nC)
- Low Cross ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRF830
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF830 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 4.5 | 100 | 500 | 1.5 | 20 |
IRF830 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- High Current
- High Speed Switching
- Switch Mode Power Supplies (SMPS)
You can download this datasheet for IRF830 4.5A 500V N-Channel Power MOSFET from the link given below:
