MUR8100E 8A & 1000V Ultrafast Recovery Diode is a series of switch mode power rectifiers and is designed for use in switching power supplies, inverters and as free wheeling diodes.
MUR8100E Pinout
MUR8100E Features
- 20 m J Avalanche Energy Guaranteed
- Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits
- Ultrafast 75 Nanosecond Recovery Time
- 175°C Operating Junction Temperature
- Popular TO−220 Package
- Low Forward Voltage
- Low Leakage Current
- High Temperature Glass Passivated Junction
- Reverse Voltage to 1000 V
- Pb−Free Packages are Available
MUR8100E Specification
| Diode Type | Rectifier Diode |
| Application | Ultra Fast Recovery |
| Diode Element Material | Silicon |
| Forward Voltage-Max (VF) | 1.8 V |
| Non-rep Pk Forward Current-Max | 100.0 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 175.0 Cel |
| Output Current-Max | 8.0 A |
| Rep Pk Reverse Voltage-Max | 1000.0 V |
| Reverse Current-Max | 25.0 µA |
| Reverse Recovery Time-Max | 0.1 µs |
You can download this datasheet for MUR8100E 8A 1000V Ultra-Fast Recovery from the link given below:
